unisonic technologies co., ltd ut3n06 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-366.c n-channel enhancement mode power mosfet ? description the utc ut3n06 is an n-channel power mosfet providing very low on-resistance. it has high efficiency and perfect cost-effectiveness. it can be genera lly applied in the commercial and industrial fields. ? features * simple drive requirement ? symbol gate source drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 ut3n06l-ae3-r UT3N06G-AE3-R sot-23 s g d tape reel ut3n06l-tn3-r ut3n06g-tn3-r to-252 g d s tape reel ut3n06l-tn3-t ut3n06g-tn3-t to-252 g d s tube ? marking
ut3n06 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-366.c ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (v gs =4.5v, t a = 25c) (note 2) i d 3.0 a pulsed drain current (note 3, 4) i dm 10 a power dissipation (t a = 25c) sot-23 p d 0.35 w to-252 1.13 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. surface mounted on 1 in 2 copper pad of fr4 board; 270c/w when mounted on min. copper pad. 3. pulse width limited by t j ( max ) 4. pulse width 300 s, duty cycle 2%. ? thermal data parameter symbol rating unit junction to ambient sot-23 ja 350 c/w to-252 110 c/w ? electrical characteristics (t j = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 60 v breakdown voltage temperature coefficient j dss t bv reference to 25c, i d =1ma 0.05 v/c drain-source leakage current i dss v ds =60v,v gs =0v 10 a gate-source leakage current i gss v gs =20v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1.0 3.0 v drain to source on -state resistance r ds(on) v gs =10v, i d =3a 90 m ? v gs =4.5v, i d =2a 120 m ? dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f =1.0mhz 490 780 pf output capacitance c oss 55 pf reverse transfer capacitance c rss 40 pf switching parameters turn-on delay time (note) t d ( on ) v gs =10v, v ds =30v, i d =1a, r d =30 ? , r g =3.3 ? 6 ns turn-on rise time t r 5 42 ns turn-off delay time t d ( off ) 16 ns turn-off fall-time t f 3 58 ns total gate charge (note) q g v gs =4.5v, v ds =48v, i d =3a 6 10 nc gate source charge q gs 1.6 nc gate drain charge q gd 3 nc source- drain diode ratings and characteristics drain-source diode forward voltage (note) v sd i s =1.2a, v gs =0v 1.2 v reverse recovery time t r r i s =3a,v gs =0v, di/dt=100a/s 25 ns reverse recovery charge q rr 26 nc note: pulse width 300 s, duty cycle 2%.
ut3n06 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-366.c ? test waveforms q gs q gd q g 4.5v v g charge q switching time waveform gate charge waveform utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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